Free-space AO Modulator (Acousto-Optic Modulator)

M200-4A-GH11

• 380 to 430nm AO modulation

• 200MHz drive frequency

• 10ns rise-time

Description

An acousto-optic modulator suitable for use with frequency doubled Ti:Sapphire lasers.

Manufactured in fused silica and with our superior high damage threshold anti-reflection coatings this modulator provides extremely fast digital or analogue switching, coupled with an ultra-high extinction ratio and optimised throughput.

Specification

Interaction Material: Fused Silica

Acoustic Mode: Isotropic, compressional

Wavelength: 380 to 430nm

Polarisation: Linear, vertical to base

Anti-Reflection Coating: < 0.5% per surface

Transmission: > 98.5%

Extinction Ratio (1st order on/off): > 55dB

Frequency: 200MHz

Active Aperture: 0.20mm

Input Impedance: 50Ω

Maximum RF Power Requirement: 2.5W

Operating Temperature: +10 to +60°C

Storage Temperature: -15 to +70°C

Performance characteristics at 405nm:

Beam Diameter: 90μm

Rise-Time (10-90%): 10ns

Modulation Bandwidth (3dB): 50MHz

Diffracted Beam Ellipticity: < 15%

Separation Angle: 13.5mrad

Diffraction Efficiency: > 80%

RF Power: 2W